Behavior of indium in CdSiAs2 crystals
Identifieur interne : 000459 ( Main/Exploration ); précédent : 000458; suivant : 000460Behavior of indium in CdSiAs2 crystals
Auteurs : RBID : ISTEX:11182_1990_Article_BF00894209.pdfAbstract
The effect of indium and gallium (In, Ga) impurities on electrical and luminescence properties of p-CdSiAs2 crystals is studied. The energy spectrum, formed when the centers are doped, and their contribution to the spectral composition of the recombination radiation is discussed.
DOI: 10.1007/BF00894209
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Behavior of indium in CdSiAs2 crystals</title><author><name>V. Yu. Rud'</name><affiliation wicri:level="1"><mods:affiliation>Physicotechnical Institute of the Academy of Sciences of the Turkmen SSR, USSR</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>Physicotechnical Institute of the Academy of Sciences of the Turkmen SSR</wicri:regionArea></affiliation><affiliation wicri:level="1"><mods:affiliation>A. I. Ioffe Physicotechnical Institute of the Academy of Sciences of the USSR, USSR</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>A. I. Ioffe Physicotechnical Institute of the Academy of Sciences of the USSR</wicri:regionArea></affiliation></author><author><name>Yu. V. Rud'</name><affiliation wicri:level="1"><mods:affiliation>Physicotechnical Institute of the Academy of Sciences of the Turkmen SSR, USSR</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>Physicotechnical Institute of the Academy of Sciences of the Turkmen SSR</wicri:regionArea></affiliation><affiliation wicri:level="1"><mods:affiliation>A. I. Ioffe Physicotechnical Institute of the Academy of Sciences of the USSR, USSR</mods:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>A. I. Ioffe Physicotechnical Institute of the Academy of Sciences of the USSR</wicri:regionArea></affiliation></author><author><name>M. Serginov</name></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11182_1990_Article_BF00894209.pdf</idno><date when="1990">1990</date><idno type="doi">10.1007/BF00894209</idno><idno type="wicri:Area/Main/Corpus">000348</idno><idno type="wicri:Area/Main/Curation">000348</idno><idno type="wicri:Area/Main/Exploration">000459</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The effect of indium and gallium (In, Ga) impurities on electrical and luminescence properties of p-CdSiAs2 crystals is studied. The energy spectrum, formed when the centers are doped, and their contribution to the spectral composition of the recombination radiation is discussed.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="3afcc2e9f933e8fa1cbe72d39d810eddfcb2e5ec"><titleInfo lang="eng"><title>Behavior of indium in CdSiAs2 crystals</title></titleInfo><name type="personal"><namePart type="given">V. Yu.</namePart><namePart type="family">Rud'</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physicotechnical Institute of the Academy of Sciences of the Turkmen SSR, USSR</affiliation><affiliation>A. I. Ioffe Physicotechnical Institute of the Academy of Sciences of the USSR, USSR</affiliation></name><name type="personal"><namePart type="given">Yu. V.</namePart><namePart type="family">Rud'</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physicotechnical Institute of the Academy of Sciences of the Turkmen SSR, USSR</affiliation><affiliation>A. I. Ioffe Physicotechnical Institute of the Academy of Sciences of the USSR, USSR</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Serginov</namePart><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre>Physics of Semiconductors and Dielectrics</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers-Plenum Publishers, New York</publisher><dateCreated encoding="w3cdtf">1988-06-30</dateCreated><dateValid encoding="w3cdtf">2004-12-13</dateValid><copyrightDate encoding="w3cdtf">1990</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The effect of indium and gallium (In, Ga) impurities on electrical and luminescence properties of p-CdSiAs2 crystals is studied. The energy spectrum, formed when the centers are doped, and their contribution to the spectral composition of the recombination radiation is discussed.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Soviet Physics Journal</title></titleInfo><titleInfo><title>Soviet Physics Journal</title><partNumber>Year: 1990</partNumber><partNumber>Volume: 33</partNumber><partNumber>Number: 4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1990-04-01</dateIssued><copyrightDate encoding="w3cdtf">1990</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Physics, general</topic><topic>Mathematical and Computational Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Condensed Matter</topic><topic>Applied Optics, Optoelectronics, Optical Devices</topic></subject><identifier type="issn">0038-5697</identifier><identifier type="issn">Electronic: 1573-9228</identifier><identifier type="matrixNumber">11182</identifier><identifier type="local">IssueArticleCount: 23</identifier><recordInfo><recordOrigin>Plenum Publishing Corporation, 1990</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00894209</identifier><identifier type="matrixNumber">Art8</identifier><identifier type="local">BF00894209</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>310</start><end>313</end></extent></part><recordInfo><recordOrigin>Plenum Publishing Corporation, 1990</recordOrigin><recordIdentifier>11182_1990_Article_BF00894209.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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